
P-channel silicon MOSFET, SOT-23 package, for small signal applications. Features 30V drain-source voltage (Vdss), 1.1A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 350mR. Operates with a nominal gate-source voltage (Vgs) of -1V and a maximum gate-source voltage of 20V. Includes fast switching times with a turn-on delay of 1.9ns and a fall time of 2.9ns. Surface mountable with a maximum power dissipation of 625mW.
Diodes ZXM61P03FTA technical specifications.
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