P-channel silicon MOSFET, SOT-23 package, for small signal applications. Features 30V drain-source voltage (Vdss), 1.1A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 350mR. Operates with a nominal gate-source voltage (Vgs) of -1V and a maximum gate-source voltage of 20V. Includes fast switching times with a turn-on delay of 1.9ns and a fall time of 2.9ns. Surface mountable with a maximum power dissipation of 625mW.
PackageSOT-23
Current Rating-1.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM61P03FTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
1.1A
Current Rating
-1.1A
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
350mR
Dual Supply Voltage
-30V
Fall Time
2.9ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
806mW
Radiation Hardening
No
Rds On Max
350mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
8.9ns
Turn-On Delay Time
1.9ns
DC Rated Voltage
-30V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM61P03FTA Datasheet
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