P-channel MOSFET, surface mount, SOIC-8 package. Features 20V drain-source voltage (Vdss), 8A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 25mR. Operates with a gate-source voltage (Vgs) up to 12V and offers a maximum power dissipation of 2.5W. This silicon transistor exhibits a turn-on delay time of 14ns and a fall time of 98.4ns, with an operating temperature range of -55°C to 150°C.
PackageSOIC
Current Rating-7.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM66P02N8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8A
Current Rating
-7.6A
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
25mR
Fall Time
98.4ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
2.068nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
118.4ns
Turn-On Delay Time
14ns
DC Rated Voltage
-20V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM66P02N8TA Datasheet
Download the complete datasheet for Diodes ZXM66P02N8TA to view detailed technical specifications.
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