P-channel silicon MOSFET, surface mount SOIC-8 package, featuring 30V drain-source voltage and 7.9A continuous drain current. Offers low 25mR drain-source on-resistance and 1.979nF input capacitance. Operates across a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Compliant with RoHS and REACH SVHC standards.
PackageSOIC
Current Rating-7.9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM66P03N8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.9A
Current Rating
-7.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25mR
Fall Time
39.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.979nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
94.6ns
Turn-On Delay Time
7.6ns
DC Rated Voltage
-30V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM66P03N8TA Datasheet
Download the complete datasheet for Diodes ZXM66P03N8TA to view detailed technical specifications.
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