N-Channel and P-Channel MOSFET, 30V Drain-Source Voltage, 2.1A Continuous Drain Current, and 120mΩ Max Drain-Source On-Resistance. This dual-element silicon Metal-Oxide-Semiconductor FET features a 2.075mm width, 3.08mm length, and 0.78mm height in a DFN3020B-8 surface-mount package. Operating from -55°C to 150°C, it offers fast switching with a 1.5ns turn-on delay and 7.5ns fall time, and is RoHS and REACH SVHC compliant.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC3AMCTA technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
210mR
Fall Time
7.5ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.78mm
Input Capacitance
190pF
Lead Free
Lead Free
Length
3.08mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
11.3ns
Turn-On Delay Time
1.5ns
Width
2.075mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMC3AMCTA Datasheet
Download the complete datasheet for Diodes ZXMC3AMCTA to view detailed technical specifications.
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