
N-Channel and P-Channel MOSFET, 30V Drain-Source Voltage, 2.1A Continuous Drain Current, and 120mΩ Max Drain-Source On-Resistance. This dual-element silicon Metal-Oxide-Semiconductor FET features a 2.075mm width, 3.08mm length, and 0.78mm height in a DFN3020B-8 surface-mount package. Operating from -55°C to 150°C, it offers fast switching with a 1.5ns turn-on delay and 7.5ns fall time, and is RoHS and REACH SVHC compliant.
Diodes ZXMC3AMCTA technical specifications.
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