Dual N-Channel and P-Channel MOSFET for surface mount applications. Features 40V drain-source breakdown voltage, 5.2A continuous drain current, and low 50mΩ drain-source on-resistance. Operates with a 20V gate-source voltage and offers fast switching speeds with turn-on delay of 3.7ns and fall time of 18ns. Housed in a compact SOIC-8 package, this RoHS compliant component is designed for efficient power management.
PackageSOIC
Current Rating4.7A
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC4A16DN8TA technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 4.7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 3.7ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMC4A16DN8TA Datasheet
Download the complete datasheet for Diodes ZXMC4A16DN8TA to view detailed technical specifications.
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