Dual N-Channel and P-Channel JFET, surface mount, in an MSOP package. Features 20V Drain to Source Breakdown Voltage, 1.7A Continuous Drain Current, and 150mΩ Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.04W. Includes 3.4ns turn-on delay and 9.6ns fall time.
PackageMSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMD63C02XTA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
1.7A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
270mR
Fall Time
9.6ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.95mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.04W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
130mR
RoHS Compliant
Yes
Turn-Off Delay Time
16.4ns
Turn-On Delay Time
3.4ns
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMD63C02XTA Datasheet
Download the complete datasheet for Diodes ZXMD63C02XTA to view detailed technical specifications.
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