N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount device featuring 20V Drain to Source Voltage (Vdss) and 2.4A Continuous Drain Current (ID). Offers low 130mR Drain to Source Resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. This MSOP-packaged transistor boasts fast switching speeds with a 3.4ns Turn-On Delay Time and 8.1ns Fall Time, suitable for various electronic applications.
PackageMSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMD63N02XTC technical specifications.
General
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 350pF |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 3.4ns |
| Weight | 0.004938oz |
| Width | 3.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMD63N02XTC Datasheet
Download the complete datasheet for Diodes ZXMD63N02XTC to view detailed technical specifications.
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