P-channel MOSFET, 2-element, silicon, metal-oxide semiconductor FET designed for surface mount applications. Features a continuous drain current of 1.7A, drain-source voltage of 20V, and a maximum drain-source on resistance of 270mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.25W. Packaged in MSOP for efficient integration.
PackageMSOP
Current Rating-1.7A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXMD63P02XTA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
1.7A
Current Rating
-1.7A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
270mR
Fall Time
9.6ns
Gate to Source Voltage (Vgs)
12V
Height
0.95mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.04W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
16.4ns
Turn-On Delay Time
3.4ns
DC Rated Voltage
-20V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMD63P02XTA Datasheet
Download the complete datasheet for Diodes ZXMD63P02XTA to view detailed technical specifications.
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