Surface mount P-channel MOSFET featuring 30V drain-source voltage and 3.8A continuous drain current. This dual-channel device offers a low 55mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 1.25W. It operates with a 20V gate-source voltage and is packaged in an 8-SOIC (SOP) case. Key switching characteristics include a 3.8ns turn-on delay and a 26.2ns fall time.
PackageSOP
Current Rating-4.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXMD65P03N8TA technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | -4.4A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 26.2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 930pF |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Packaging | Cut Tape |
| Polarity | P-CHANNEL |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 49.5ns |
| Turn-On Delay Time | 3.8ns |
| DC Rated Voltage | -30V |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMD65P03N8TA Datasheet
Download the complete datasheet for Diodes ZXMD65P03N8TA to view detailed technical specifications.
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