Surface mount N-channel and P-channel JFET with 100V drain-source voltage and 1.1A continuous drain current. Features 700mΩ max drain-source on-resistance, 138pF input capacitance, and 3.3ns fall time. Operates from -55°C to 150°C with 1.3W max power dissipation. This 4-element silicon FET is supplied in tape and reel packaging.
PackageSMD/SMT
Current Rating1.4A
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMHC10A07T8TA technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 1.4A |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1R |
| Fall Time | 3.3ns |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 138pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 5.9ns |
| Turn-On Delay Time | 1.6ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMHC10A07T8TA Datasheet
Download the complete datasheet for Diodes ZXMHC10A07T8TA to view detailed technical specifications.
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