Surface mount N-channel and P-channel field-effect transistor (FET) with 30V drain-source voltage and 1.64A continuous drain current. Features 125mΩ maximum drain-source on-resistance, 2.9ns fall time, and 12.1ns turn-off delay. Operates from -55°C to 150°C with 870mW maximum power dissipation. This 4-element silicon FET is packaged in an SOIC format, tape and reel, and is lead-free and RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMHC3A01N8TC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.64A |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 125mR |
| Fall Time | 2.9ns |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 190pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.1ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMHC3A01N8TC Datasheet
Download the complete datasheet for Diodes ZXMHC3A01N8TC to view detailed technical specifications.
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