Surface mount, 4-element, N-channel and P-channel junction field-effect transistor (JFET) with a 60V drain-source voltage (Vdss) and 1.28A continuous drain current (ID). Features a low drain-to-source resistance of 600mR and a maximum power dissipation of 870mW. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOIC-8 case, this lead-free and RoHS compliant component offers fast switching speeds with turn-on delay of 1.6ns and fall time of 5.8ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZXMHC6A07N8TC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.28A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5.8ns |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 166pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 1.6ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMHC6A07N8TC Datasheet
Download the complete datasheet for Diodes ZXMHC6A07N8TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
