
N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23 package. Features 100V Drain to Source Voltage (Vdss) and 800mA Continuous Drain Current (ID). Offers low Drain-source On Resistance (Rds On) of 700mR maximum. Includes fast switching speeds with a 1.5ns fall time and 1.8ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
Diodes ZXMN10A07FTA technical specifications.
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