N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23 package. Features 100V Drain to Source Voltage (Vdss) and 800mA Continuous Drain Current (ID). Offers low Drain-source On Resistance (Rds On) of 700mR maximum. Includes fast switching speeds with a 1.5ns fall time and 1.8ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23-3
Voltage100V
Current Rating800mA
MountingSurface Mount
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Technical Specifications
Diodes ZXMN10A07FTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
800mA
Current Rating
800mA
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
700mR
Fall Time
1.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
138pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
806mW
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
4.1ns
Turn-On Delay Time
1.8ns
Voltage
100V
DC Rated Voltage
100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN10A07FTA Datasheet
Download the complete datasheet for Diodes ZXMN10A07FTA to view detailed technical specifications.
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