N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features 100V drain-source breakdown voltage and 1.4A continuous drain current. On-resistance is 700mΩ maximum. Packaged in SOT-89 for surface mounting, with a 3-pin configuration. Operating temperature range from -55°C to 150°C.
PackageSOT-89-3
Current Rating700mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZXMN10A07ZTA technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
1.4A
Current Rating
700mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
700mR
Fall Time
2.1ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
138pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.6W
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
4.1ns
Turn-On Delay Time
1.8ns
DC Rated Voltage
100V
Weight
0.004603oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN10A07ZTA Datasheet
Download the complete datasheet for Diodes ZXMN10A07ZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
