Diodes
ZXMN10A08DN8TC
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
Diodes ZXMN10A08DN8TC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 2 N-Channel |
| Input Capacitance | 405pF |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN10A08DN8TC Datasheet
Download the complete datasheet for Diodes ZXMN10A08DN8TC to view detailed technical specifications.
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