N-channel silicon Metal-oxide Semiconductor FET for surface mount applications. Features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low Drain-to-Source On Resistance (Rds On) of 250mR. This single-element transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.7W. Packaged in a SOT-23-6 surface-mount case, it is RoHS and Lead Free compliant.
PackageSOT-23-6
Current Rating1.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN10A08E6TA technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 1.5A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 405pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 3.4ns |
| DC Rated Voltage | 100V |
| Weight | 0.000529oz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN10A08E6TA Datasheet
Download the complete datasheet for Diodes ZXMN10A08E6TA to view detailed technical specifications.
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