N-channel silicon Metal-oxide Semiconductor FET for surface mount applications. Features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low Drain-to-Source On Resistance (Rds On) of 250mR. This single-element transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.7W. Packaged in a SOT-23-6 surface-mount case, it is RoHS and Lead Free compliant.
PackageSOT-23-6
Current Rating1.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN10A08E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
3.5A
Current Rating
1.5A
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
250mR
Fall Time
2.2ns
Gate to Source Voltage (Vgs)
20V
Height
1.3mm
Input Capacitance
405pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
250mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
8ns
Turn-On Delay Time
3.4ns
DC Rated Voltage
100V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN10A08E6TA Datasheet
Download the complete datasheet for Diodes ZXMN10A08E6TA to view detailed technical specifications.
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