
N-Channel Power MOSFET, 150V Drain-Source Voltage, 1.7A Continuous Drain Current, and 650mΩ Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-252-3 surface-mount package, ideal for efficient power management. With a maximum power dissipation of 2.2W and fast switching times (3.3ns turn-on, 13.3ns fall time), it offers reliable performance across a wide operating temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant, supplied in tape and reel packaging.
Diodes ZXMN15A27KTC technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 13.3ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 169pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.2W |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.1ns |
| Turn-On Delay Time | 3.3ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMN15A27KTC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
