N-channel enhancement mode power MOSFET in a TO-252AA DPAK package. Features a maximum drain-source voltage of 200V and a continuous drain current of 2.3A. Offers a low drain-source on-resistance of 750mΩ at 10V. Designed for surface mounting with gull-wing leads, this single-element transistor boasts a maximum power dissipation of 10200mW and operates across a temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Diodes ZXMN20B28K technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.39(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
2.3A
Maximum Drain Source Resistance
750@10VmOhm
Typical Gate Charge @ Vgs
8.1@5VnC
Typical Input Capacitance @ Vds
358@25VpF
Maximum Power Dissipation
10200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6M0U4
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Diodes ZXMN20B28K Datasheet
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