N-channel silicon MOSFET, surface mountable in a SOT-23-6 package. Features a 20V drain-source breakdown voltage and a maximum continuous drain current of 3.1A. Offers a low drain-source on-resistance of 120mR at a gate-source voltage of 12V. Includes fast switching characteristics with turn-on delay time of 2.49ns and fall time of 5.21ns. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23-6
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN2A01E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
3.1A
Current Rating
2.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
225mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
120mR
Fall Time
5.21ns
Gate to Source Voltage (Vgs)
12V
Height
1.3mm
Input Capacitance
303pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
7.47ns
Turn-On Delay Time
2.49ns
DC Rated Voltage
20V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN2A01E6TA Datasheet
Download the complete datasheet for Diodes ZXMN2A01E6TA to view detailed technical specifications.
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