
N-channel silicon MOSFET, surface mountable in a SOT-23-6 package. Features a 20V drain-source breakdown voltage and a maximum continuous drain current of 3.1A. Offers a low drain-source on-resistance of 120mR at a gate-source voltage of 12V. Includes fast switching characteristics with turn-on delay time of 2.49ns and fall time of 5.21ns. Operates across a wide temperature range from -55°C to 150°C.
Diodes ZXMN2A01E6TA technical specifications.
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