
N-Channel Silicon MOSFET, SOT-23-6 package, offering 20V Drain-to-Source Voltage (Vdss) and 4.6A Continuous Drain Current (ID). Features low 55mR Rds On, 837pF input capacitance, and fast switching with 4.7ns turn-on and 5.7ns fall times. Operates from -55°C to 150°C with 1.1W max power dissipation. Surface mount design, lead-free, RoHS, and REACH SVHC compliant.
Diodes ZXMN2A03E6TA technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4.6A |
| Current Rating | 4.5A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5.7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.3mm |
| Input Capacitance | 837pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18.5ns |
| Turn-On Delay Time | 4.7ns |
| DC Rated Voltage | 20V |
| Weight | 0.000529oz |
| Width | 1.8mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMN2A03E6TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
