
N-channel MOSFET transistor in a SOT-23-6 package, designed for surface mounting. Features a maximum continuous drain current of 5.4A and a low drain-source on-resistance of 40mR at a gate-source voltage of 8V. Operates with a drain-source voltage up to 20V, offering fast switching speeds with turn-on delay of 4.2ns and fall time of 6.2ns. Maximum power dissipation is 1.7W, with an operating temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
Diodes ZXMN2B03E6TA technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.3mm |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.9ns |
| Turn-On Delay Time | 4.2ns |
| Weight | 0.000529oz |
| Width | 1.8mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMN2B03E6TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
