N-channel MOSFET transistor in a SOT-23-6 package, designed for surface mounting. Features a maximum continuous drain current of 5.4A and a low drain-source on-resistance of 40mR at a gate-source voltage of 8V. Operates with a drain-source voltage up to 20V, offering fast switching speeds with turn-on delay of 4.2ns and fall time of 6.2ns. Maximum power dissipation is 1.7W, with an operating temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN2B03E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
5.4A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
40mR
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
8V
Height
1.3mm
Input Capacitance
1.16nF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
33.9ns
Turn-On Delay Time
4.2ns
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN2B03E6TA Datasheet
Download the complete datasheet for Diodes ZXMN2B03E6TA to view detailed technical specifications.
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