N-Channel Silicon MOSFET, SOT-23 package, offering a continuous drain current of 4.9A and a drain-source voltage of 20V. Features low drain-source on-resistance of 45mR (max) and a gate-source voltage up to 12V. This surface-mount transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.4W. Includes fast switching characteristics with turn-on delay time of 2.9ns and fall time of 5.6ns.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Diodes ZXMN2F30FHTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
4.9A
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
45mR
Dual Supply Voltage
20V
Fall Time
5.6ns
Gate to Source Voltage (Vgs)
12V
Height
1.02mm
Input Capacitance
452pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
900mV
Number of Channels
1
Number of Elements
1
On-State Resistance
65mR
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
SMD/SMT
Threshold Voltage
900mV
Turn-Off Delay Time
19.4ns
Turn-On Delay Time
2.9ns
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Diodes ZXMN2F30FHTA Datasheet
Download the complete datasheet for Diodes ZXMN2F30FHTA to view detailed technical specifications.
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