N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23-6 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 3A Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 120mR. Operates with a Gate to Source Voltage (Vgs) up to 20V. Includes fast switching characteristics with a Turn-On Delay Time of 1.7ns and Fall Time of 2.3ns. Surface mountable with a maximum power dissipation of 1.1W.
PackageSOT-23-6
Current Rating2.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A01E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
3A
Current Rating
2.8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
120mR
Fall Time
2.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.3mm
Input Capacitance
190pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
6.6ns
Turn-On Delay Time
1.7ns
DC Rated Voltage
30V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3A01E6TA Datasheet
Download the complete datasheet for Diodes ZXMN3A01E6TA to view detailed technical specifications.
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