N-channel enhancement mode MOSFET in a SOT-89 (TO-243AA) package. Features 30V drain-source voltage, 3.3A continuous drain current, and low 120mOhm drain-source resistance at 10V. Offers typical gate charge of 5nC at 10V and input capacitance of 186pF at 25V. Surface mountable with a 4-pin configuration and tab. Operating temperature range from -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Diodes ZXMN3A01ZTA technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-89 |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-243AA |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.3A |
| Maximum Gate Threshold Voltage | 1(Min)V |
| Maximum Drain Source Resistance | 120@10VmOhm |
| Typical Gate Charge @ Vgs | 5@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 5nC |
| Typical Input Capacitance @ Vds | 186@25VpF |
| Maximum Power Dissipation | 2120mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes ZXMN3A01ZTA Datasheet
Download the complete datasheet for Diodes ZXMN3A01ZTA to view detailed technical specifications.
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