
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 6.7A. Offers a low drain-source on-resistance of 25mR (max) and a maximum power dissipation of 1.1W. Operates across a wide temperature range from -55°C to 150°C. Packaged in MSOP with tape and reel for efficient assembly.
Diodes ZXMN3A02X8TA technical specifications.
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