N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 6.7A. Offers a low drain-source on-resistance of 25mR (max) and a maximum power dissipation of 1.1W. Operates across a wide temperature range from -55°C to 150°C. Packaged in MSOP with tape and reel for efficient assembly.
PackageMSOP
Current Rating6.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A02X8TA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
6.7A
Current Rating
6.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25mR
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
35ns
Turn-On Delay Time
3.9ns
DC Rated Voltage
30V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3A02X8TA Datasheet
Download the complete datasheet for Diodes ZXMN3A02X8TA to view detailed technical specifications.
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