N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a continuous drain current of 4.9A and a drain-to-source voltage of 30V. Featuring a low on-resistance of 35mR, this surface-mount device operates within a temperature range of -55°C to 150°C. Its SOIC-8 package, measuring 5mm x 4mm x 1.5mm, is supplied on tape and reel for efficient assembly. Key electrical characteristics include a gate-to-source voltage of 20V and input capacitance of 796pF, with fast switching times including a 3ns turn-on delay.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A06DN8TC technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 796pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21.6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN3A06DN8TC Datasheet
Download the complete datasheet for Diodes ZXMN3A06DN8TC to view detailed technical specifications.
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