Diodes
ZXMN3AMCTA
Power Field-Effect Transistor, 2.9A I(D), 30V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, DFN3020B-8, 8 PIN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3AMCTA technical specifications.
General
Continuous Drain Current (ID)
3.7A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
30V
Fall Time
2.9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
190pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Turn-Off Delay Time
6.6ns
Turn-On Delay Time
1.7ns
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3AMCTA Datasheet
Download the complete datasheet for Diodes ZXMN3AMCTA to view detailed technical specifications.
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