N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 4.6A. Offers a low drain-source on-resistance (Rds On) of 47mR. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 surface-mount package. Includes fast switching times with a turn-on delay of 1.6ns and fall time of 2.6ns.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3F30FHTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 47mR |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 318pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 47mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 1.6ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN3F30FHTA Datasheet
Download the complete datasheet for Diodes ZXMN3F30FHTA to view detailed technical specifications.
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