N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOP-8 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V Dual Supply Voltage. Offers a continuous drain current (ID) of 7.1A and a low Drain-source On Resistance-Max of 28mR. Operates within a temperature range of -55°C to 150°C. Includes 2.5ns Turn-On Delay Time and 9.7ns Fall Time. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3G32DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.1A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28mR
Dual Supply Voltage
30V
Fall Time
9.7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
472pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
2
On-State Resistance
45mR
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
14ns
Turn-On Delay Time
2.5ns
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3G32DN8TA Datasheet
Download the complete datasheet for Diodes ZXMN3G32DN8TA to view detailed technical specifications.
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