DIODES

ZXMN3G32DN8TA

Datasheet

N-Ch JFET, 30V, 7.1A ID, 28mR RdsOn, SOP-8

Diodes

ZXMN3G32DN8TA

Name: ZXMN3G32DN8TA Diodes
Brand: Diodes
SKU: ZXMN3G32DN8TA

N-Ch JFET, 30V, 7.1A ID, 28mR RdsOn, SOP-8

N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOP-8 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V Dual Supply Voltage. Offers a continuous drain current (ID) of 7.1A and a low Drain-source On Resistance-Max of 28mR. Operates within a temperature range of -55°C to 150°C. Includes 2.5ns Turn-On Delay Time and 9.7ns Fall Time. RoHS compliant.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes ZXMN3G32DN8TA technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	7.1A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	28mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	28mR
Dual Supply Voltage	30V
Fall Time	9.7ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	472pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Mount	Surface Mount
Nominal Vgs	3V
Number of Channels	2
On-State Resistance	45mR
Package Quantity	500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	28mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Threshold Voltage	3V
Turn-Off Delay Time	14ns
Turn-On Delay Time	2.5ns
Weight	0.00261oz
Width	4mm