N-Channel Silicon Metal-oxide Semiconductor FET, SOT-23-6 package. Features 60V Drain to Source Breakdown Voltage (Vdss) and 3.5A Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 80mR. Operating temperature range from -55°C to 150°C. Surface mountable with a 1.1W maximum power dissipation.
PackageSOT-23-6
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN6A08E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
3.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
80mR
Fall Time
2.1ns
Gate to Source Voltage (Vgs)
20V
Height
1.3mm
Input Capacitance
459pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
80mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
12.3ns
Turn-On Delay Time
2.6ns
DC Rated Voltage
60V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A08E6TA Datasheet
Download the complete datasheet for Diodes ZXMN6A08E6TA to view detailed technical specifications.
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