N-channel silicon MOSFET featuring 60V drain-source voltage and 7.5A continuous drain current. This surface-mount device offers a low 40mΩ drain-source on-resistance and a 1V threshold voltage. Designed for efficient switching, it exhibits a 4.9ns turn-on delay and 4.6ns fall time. Housed in a low-profile SOIC-4 (SOT-223) package, it operates from -55°C to 150°C with a maximum power dissipation of 3.9W.
PackageSOT-223
Current Rating6.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN6A09GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
7.5A
Current Rating
6.8A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
40mR
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
1.407nF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.9W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.9W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
25.3ns
Turn-On Delay Time
4.9ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A09GTA Datasheet
Download the complete datasheet for Diodes ZXMN6A09GTA to view detailed technical specifications.
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