N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount SOIC package. Features 60V Drain to Source Voltage (Vdss), 3.2A Continuous Drain Current (ID), and 120mR Max Drain-source On Resistance. Operates from -55°C to 150°C with 2.1W Power Dissipation. Includes 1.95ns Turn-On Delay Time and 4.6ns Fall Time. RoHS compliant.
PackageSOIC
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZXMN6A11DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.2A
Current Rating
2.7A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
120mR
Fall Time
4.6ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
8.2ns
Turn-On Delay Time
1.95ns
DC Rated Voltage
60V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A11DN8TA Datasheet
Download the complete datasheet for Diodes ZXMN6A11DN8TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
