N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a 60V drain-to-source voltage and 2.5A continuous drain current. Featuring a low 120mR Rds On Max, this surface mount device operates within a -55°C to 150°C temperature range. Its SO-8 package, measuring 5mm x 4mm x 1.5mm, includes a 330pF input capacitance and fast switching times with a 1.95ns turn-on delay.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN6A11DN8TC technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
2.5A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Fall Time
3.5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
330pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
120mR
RoHS Compliant
Yes
Turn-Off Delay Time
8.2ns
Turn-On Delay Time
1.95ns
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A11DN8TC Datasheet
Download the complete datasheet for Diodes ZXMN6A11DN8TC to view detailed technical specifications.
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