N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a 60V drain-to-source voltage and 2.5A continuous drain current. Featuring a low 120mR Rds On Max, this surface mount device operates within a -55°C to 150°C temperature range. Its SO-8 package, measuring 5mm x 4mm x 1.5mm, includes a 330pF input capacitance and fast switching times with a 1.95ns turn-on delay.
Diodes ZXMN6A11DN8TC technical specifications.
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