N-Channel MOSFET, 70V Vdss, 3.8A continuous drain current, and 130mΩ maximum drain-source on-resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-261AA (SOT-223) package for surface mounting. Key electrical characteristics include a 1.9ns turn-on delay, 5.8ns fall time, and 11.5ns turn-off delay. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 3.9W.
PackageSOT-223
Current Rating3.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN7A11GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
3.8A
Current Rating
3.8A
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
70V
Drain-source On Resistance-Max
130mR
Fall Time
5.8ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
298pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.9W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.9W
Radiation Hardening
No
Rds On Max
130mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
11.5ns
Turn-On Delay Time
1.9ns
DC Rated Voltage
70V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN7A11GTA Datasheet
Download the complete datasheet for Diodes ZXMN7A11GTA to view detailed technical specifications.
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