N-Channel MOSFET, 70V Drain-Source Voltage, 6.1A Continuous Drain Current, and 130mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a DPAK-3 surface mount package, ideal for power applications. Key electrical characteristics include a 20V Gate-to-Source Voltage, 298pF input capacitance, and a maximum power dissipation of 8.5W. Operating temperature range is -55°C to 150°C, with fast switching times including 1.9ns turn-on delay and 5.8ns fall time. This component is RoHS and REACH SVHC compliant.
PackageTO-252-3
Current Rating6.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN7A11KTC technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.1A |
| Current Rating | 6.1A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 130mR |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 298pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 11.5ns |
| Turn-On Delay Time | 1.9ns |
| DC Rated Voltage | 70V |
| Weight | 0.139332oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN7A11KTC Datasheet
Download the complete datasheet for Diodes ZXMN7A11KTC to view detailed technical specifications.
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