P-channel MOSFET, 100V drain-source voltage, 3.9A continuous drain current, and 350mΩ drain-source resistance. Features include a 3ns turn-on delay, 7.2ns fall time, and 424pF input capacitance. This surface-mount transistor is housed in a TO-252-3 package with a maximum power dissipation of 2W and operates from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXMP10A17KTC technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 424pF |
| Length | 6.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMP10A17KTC Datasheet
Download the complete datasheet for Diodes ZXMP10A17KTC to view detailed technical specifications.
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