P-channel silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a drain current capability of 3.2A and a breakdown voltage of 30V. Housed in a 6-pin SOT-23 package with dual terminal positions.
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Technical Specifications
Diodes ZXMP3A17E6TA technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Diodes ZXMP3A17E6TA Datasheet
Download the complete datasheet for Diodes ZXMP3A17E6TA to view detailed technical specifications.
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