DIODES

ZXMP3F36N8TA

Datasheet

P-Channel JFET, 30V, 9.6A ID, 20mR Rds On, SOP-8

Diodes

ZXMP3F36N8TA

Name: ZXMP3F36N8TA Diodes
Brand: Diodes
SKU: ZXMP3F36N8TA

P-Channel JFET, 30V, 9.6A ID, 20mR Rds On, SOP-8

P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 9.6A. Offers a low drain-to-source resistance (Rds On Max) of 20mR. Operates within a temperature range of -55°C to 150°C. Packaged in an SO surface-mount package, ideal for tape and reel assembly.

PackageSO

MountingSurface Mount

PolarityP-CHANNEL

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Technical Specifications

Diodes ZXMP3F36N8TA technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	9.6A
Drain to Source Resistance	20mR
Drain to Source Voltage (Vdss)	30V
Fall Time	40ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	2.265nF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.56W
Mount	Surface Mount
Number of Channels	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Radiation Hardening	No
Rds On Max	20mR
RoHS Compliant	No
Turn-Off Delay Time	75ns
Turn-On Delay Time	3.1ns
Weight	0.01787oz
Width	4mm