
P-channel silicon MOSFET, 60V drain-source voltage, 2.7A continuous drain current, and 125mΩ drain-source resistance. Features include 2.6ns turn-on delay, 11.3ns fall time, and 26.2ns turn-off delay. Operating temperature range from -55°C to 150°C with 1.56W max power dissipation. Surface mountable in an 8-pin SO package, this RoHS and REACH SVHC compliant component is supplied on tape and reel.
Diodes ZXMP6A17N8TC technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 11.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 637pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.2ns |
| Turn-On Delay Time | 2.6ns |
| Weight | 0.00261oz |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMP6A17N8TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
