N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 60V Drain to Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Offers 350mR On-State Resistance and 400mR Drain to Source Resistance. Includes over-voltage and over-temperature fault protection with an On/Off interface. Designed for surface mounting in an 8-pin SM8 package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6004DT8TA technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15us |
| Fault Protection | Over Voltage, Over Temperature |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 1.5mm |
| Interface | On/Off |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 1.2A |
| Max Power Dissipation | 1.16W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 2 |
| Number of Outputs | 2 |
| On-State Resistance | 350mR |
| Output Configuration | Low Side |
| Output Current per Channel | 1.2A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | INTELLIFET™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 45us |
| Turn-On Delay Time | 5us |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMS6004DT8TA Datasheet
Download the complete datasheet for Diodes ZXMS6004DT8TA to view detailed technical specifications.
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