N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 60V Drain to Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Offers 350mR On-State Resistance and 400mR Drain to Source Resistance. Includes over-voltage and over-temperature fault protection with an On/Off interface. Designed for surface mounting in an 8-pin SM8 package.
Diodes ZXMS6004DT8TA technical specifications.
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