N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 60V Drain to Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Offers 350mR On-State Resistance and 400mR Drain to Source Resistance. Includes over-voltage and over-temperature fault protection with an On/Off interface. Designed for surface mounting in an 8-pin SM8 package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6004DT8TA technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
1.2A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15us
Fault Protection
Over Voltage, Over Temperature
Gate to Source Voltage (Vgs)
5V
Height
1.5mm
Interface
On/Off
Length
4.95mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
1.2A
Max Power Dissipation
1.16W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
2
Number of Outputs
2
On-State Resistance
350mR
Output Configuration
Low Side
Output Current per Channel
1.2A
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
INTELLIFET™
Threshold Voltage
1V
Turn-Off Delay Time
45us
Turn-On Delay Time
5us
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMS6004DT8TA Datasheet
Download the complete datasheet for Diodes ZXMS6004DT8TA to view detailed technical specifications.
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