N-channel enhancement mode MOSFET designed for power switching applications. Features low on-resistance and high current capability. Operates with a low gate threshold voltage, enabling efficient drive from low-voltage sources. Suitable for various power management circuits requiring robust and efficient switching.
Quick Jump:
Technical Specifications
Diodes ZXMS6004N8-13 technical specifications.
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes ZXMS6004N8-13 Datasheet
Download the complete datasheet for Diodes ZXMS6004N8-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.