N-Channel MOSFET, 60V Drain-Source Voltage, 150mΩ On-State Resistance, and 2A Continuous Drain Current. This single-element silicon Metal-Oxide Semiconductor FET features over-voltage and over-temperature fault protection, with a low-side output configuration. Packaged in a SOT-223 surface-mount case, it offers a 1V nominal gate-source voltage and a maximum power dissipation of 3W.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6005DGTA technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19us |
| Fault Protection | Over Voltage, Over Temperature |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 1.65mm |
| Interface | On/Off |
| Length | 6.55mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 2A |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Number of Outputs | 1 |
| On-State Resistance | 150mR |
| Output Configuration | Low Side |
| Output Current per Channel | 2A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | INTELLIFET® |
| Turn-Off Delay Time | 34us |
| Turn-On Delay Time | 6us |
| Weight | 0.000282oz |
| Width | 3.55mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMS6005DGTA Datasheet
Download the complete datasheet for Diodes ZXMS6005DGTA to view detailed technical specifications.
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