PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter breakdown voltage and a continuous collector current rating of -3A. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 110MHz. Housed in a 6-pin SOT-23-6 package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W.
Frequency110MHz
PackageSOT-23-6
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes ZXT10P12DE6TA technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | -12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -195mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 110MHz |
| Height | 1.3mm |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 3A |
| Max Frequency | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -12V |
| Weight | 0.000529oz |
| Width | 1.75mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT10P12DE6TA Datasheet
Download the complete datasheet for Diodes ZXT10P12DE6TA to view detailed technical specifications.
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