NPN bipolar junction transistor in SOT-23 package, featuring a 2.5A continuous collector current and 20V collector-emitter breakdown voltage. This silicon transistor offers a 160MHz gain bandwidth product and a low collector-emitter saturation voltage of 90mV. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency160MHz
PackageSOT-23
Current Rating2.5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes ZXT11N20DFTA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 90mV |
| Collector-emitter Voltage-Max | 130mV |
| Continuous Collector Current | 2.5A |
| Current Rating | 2.5A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 160MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2.5A |
| Max Frequency | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 20V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT11N20DFTA Datasheet
Download the complete datasheet for Diodes ZXT11N20DFTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
