NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and 3A continuous collector current. Operates with a 135mV collector-emitter saturation voltage and a 7.5V emitter-base voltage. Offers a 132MHz transition frequency and a maximum power dissipation of 1.25W. Packaged in a compact MSOP (MO-187AA, SUPERSOT) with lead-free and RoHS compliance.
Frequency132MHz
PackageMSOP
Current Rating3A
MountingSurface Mount
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Technical Specifications
Diodes ZXT12N50DXTA technical specifications.
General
Package/Case
MSOP
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
135mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
3A
Current Rating
3A
Emitter Base Voltage (VEBO)
7.5V
Frequency
132MHz
Gain Bandwidth Product
132MHz
Height
0.95mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
50V
Max Collector Current
3A
Max Frequency
132MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.25W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
132MHz
DC Rated Voltage
50V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT12N50DXTA Datasheet
Download the complete datasheet for Diodes ZXT12N50DXTA to view detailed technical specifications.
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