NPN silicon bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 3A continuous collector current. This surface-mount device offers a 135mV collector-emitter saturation voltage and a 132MHz gain bandwidth product. Encased in an MSOP package, it operates from -55°C to 150°C with a maximum power dissipation of 1.04W. RoHS compliant and lead-free.
PackageMSOP
Current Rating3A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXT12N50DXTC technical specifications.
General
| Package/Case | MSOP |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 135mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 132MHz |
| Height | 0.95mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 132MHz |
| DC Rated Voltage | 50V |
| Weight | 0.004938oz |
| Width | 3.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT12N50DXTC Datasheet
Download the complete datasheet for Diodes ZXT12N50DXTC to view detailed technical specifications.
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