The ZXT12P20DXTA is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 20V and a maximum collector current of 2.5A. It has a gain bandwidth product of 110MHz and is packaged in an MSOP-8 package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is suitable for surface mount applications and is available in a tape and reel packaging with 1000 units per package.
PackageMSOP
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZXT12P20DXTA technical specifications.
General
| Package/Case | MSOP |
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -160mV |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | -2.5A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 110MHz |
| Height | 0.95mm |
| Length | 3.1mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| Weight | 0.004938oz |
| Width | 3.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT12P20DXTA Datasheet
Download the complete datasheet for Diodes ZXT12P20DXTA to view detailed technical specifications.
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