PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -3A. Offers a maximum power dissipation of 1.7W and a transition frequency of 115MHz. Packaged in a SOT-23-6 surface mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency115MHz
PackageSOT-23-6
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes ZXT13P40DE6TA technical specifications.
General
Package/Case
SOT-23-6
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-175mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
240mV
Continuous Collector Current
-3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
7.5V
Frequency
115MHz
Gain Bandwidth Product
115MHz
Height
1.3mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
40V
Max Collector Current
3A
Max Frequency
115MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.7W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
115MHz
DC Rated Voltage
-40V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT13P40DE6TA Datasheet
Download the complete datasheet for Diodes ZXT13P40DE6TA to view detailed technical specifications.
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