PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Offers a maximum power dissipation of 3W and a gain bandwidth product of 110MHz. Operates within a temperature range of -55°C to 150°C. Packaged in a 2 x 2 MM MLP322, 5-pin configuration.
Current Rating-4A
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes ZXT1M322TA technical specifications.
General
| Collector Base Voltage (VCBO) | -20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -240mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 110MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -12V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT1M322TA Datasheet
Download the complete datasheet for Diodes ZXT1M322TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
