PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -3A. Offers a low Collector-Emitter Saturation Voltage of -240mV and a transition frequency of 190MHz. Packaged in a compact 2mm x 2mm x 1mm MLP322 surface mount package, suitable for tape and reel deployment. Operates across a wide temperature range from -55°C to 150°C.
Frequency190MHz
MountingSurface Mount
PolarityPNP
Power3W
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Technical Specifications
Diodes ZXT3M322TA technical specifications.
General
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -240mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 370mV |
| Continuous Collector Current | -3A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Frequency | 190MHz |
| Gain Bandwidth Product | 190MHz |
| Height | 1mm |
| Length | 2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 25nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 3W |
| RoHS Compliant | Yes |
| Transition Frequency | 190MHz |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXT3M322TA Datasheet
Download the complete datasheet for Diodes ZXT3M322TA to view detailed technical specifications.
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